Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment

被引：74

作者：

Teraji, T. ^{[1
]}

Garino, Y. ^{[1
]}

Koide, Y. ^{[1
]}

Ito, T. ^{[2
]}

机构：

[1] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[2] Osaka Univ, Dept Elect Elect & Informat Engn, Grad Sch Engn, Osaka 5650871, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 12期

关键词：

DOPED HOMOEPITAXIAL DIAMOND; SURFACES; FILM;

D O I：

10.1063/1.3153986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature fabrication of Schottky diodes was demonstrated for p-type boron-doped diamond. This fabrication method's key technique is selective modification of surface termination from monohydride into oxygen groups using vacuum ultraviolet light irradiation in oxygen. The Au contacts, formed on the hydrogen-terminated surface, maintained Ohmic properties after this selective surface oxidation. The Au contacts then deposited on the oxidized surface, imparting Schottky properties. The lateral-type diodes comprising Au Schottky contacts and Au Ohmic contacts showed blocking voltage higher than 1 kV without electrode guarding. The leakage current at 1 kV was as low as 30 pA. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3153986]

引用

页数：3

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