Tailoring of Single-Crystalline Complex Ta5Si3 Nanostructures: From Networked Nanowires to Nanosheets

被引:6
|
作者
Banis, Mohammad Norouzi [1 ]
Zhang, Yong [1 ]
Xiao, Qiangfeng [2 ]
Cai, Mei [2 ]
Li, Ruying [1 ]
Sun, Xueliang [1 ]
机构
[1] Univ Western Ontario, Dept Mech & Mat Engn, London, ON N6A 5B9, Canada
[2] Gen Motors R&D Ctr, Warren, MI 48090 USA
基金
加拿大自然科学与工程研究理事会; 加拿大创新基金会;
关键词
CHEMICAL-VAPOR-DEPOSITION; METALLIC TASI2 NANOWIRES; TANTALUM SILICIDE; CMOS TECHNOLOGY; GROWTH; INTERCONNECT; MORPHOLOGY; FILMS;
D O I
10.1021/cg400552a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Single-crystalline Ta5Si3 nanostructures with a complex morphology were synthesized through a catalyst-free, chemical vapor deposition method under low pressures. The morphology, structure, and composition of deposited nanostructures were studied by scanning electron microscopy, X-ray diffraction, and high-resolution transmission electron microscopy. These nanostructures have lengths of up to several tens of micrometers and an average thickness of 13 nm. It was found that the formation of networked Ta5Si3 nanostructures is highly sensitive to the vapor pressure of tantalum chloride and silica and is based on a vapor solid mechanism. Results indicate that, with the decrease of silica vapor pressure, the Ta5Si3 networked nanowires evolve into networked nanoribbons and nanosheets via two-dimensional growth. Cyclic voltammetry measurements of the Ta5Si3 nanostructures show superior electrochemical capacitance properties of nanosheets compared to nanowires. It is expected that these nanostructures have great potential applications for nanodevices in electronic and energy related applications.
引用
收藏
页码:436 / 441
页数:6
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