Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

被引：11
|
作者：
Klein, Brianna A. [1 ]
Baca, Albert G. [1 ]
Lepkowski, Stephan M. [1 ]
Nordquist, Christopher D. [1 ]
Wendt, Joel R. [1 ]
Allerman, Andrew A. [1 ]
Armstrong, Andrew M. [1 ]
Douglas, Erica A. [1 ]
Abate, Vincent M. [1 ]
Kaplar, Robert J. [1 ]
机构：
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 09期
关键词：
HEMT; AlGaN; RF; saturation velocity;
D O I：
10.1007/s11664-019-07421-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gate length dependent (80nm-5000mm) radio frequency measurements to extract saturation velocity are reported for Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistors fabricated into radio frequency devices using electron beam lithography. Direct current characterization revealed the threshold voltage shifting positively with increasing gate length, with devices changing from depletion mode to enhancement mode when the gate length was greater than or equal to 450nm. Transconductance varied from 10mS/mm to 25mS/mm, with the 450nm device having the highest values. Maximum drain current density was 268mA/mm at 10V gate bias. Scattering-parameter characterization revealed a maximum unity gain bandwidth (f(T)) of 28GHz, achieved by the 80nm gate length device. A saturation velocity value of 3.8x10(6)cm/s, or 35% of the maximum saturation velocity reported for GaN, was extracted from the f(T) measurements.
引用
收藏
页码：5581 / 5585
页数：5
相关论文
共 50 条
  • [21] Multicharacterization approach for studying InAl(Ga) N/Al(Ga) N/GaN heterostructures for high electron mobility transistors
    Naresh-Kumar, G.
    Vilalta-Clemente, A.
    Pandey, S.
    Skuridina, D.
    Behmenburg, H.
    Gamarra, P.
    Patriarche, G.
    Vickridge, I.
    di Forte-Poisson, M. A.
    Vogt, P.
    Kneissl, M.
    Morales, M.
    Ruterana, P.
    Cavallini, A.
    Cavalcoli, D.
    Giesen, C.
    Heuken, M.
    Trager-Cowan, C.
    AIP ADVANCES, 2014, 4 (12)
  • [22] Fabrication of 45 nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite-channel high electron-mobility transistors on GaAs substrates
    Kang, Weihua
    Zhang, Xiaodong
    Ji, Xian
    Cai, Yong
    Zhou, Jiahui
    Xu, Wenjun
    Li, Qi
    Xiao, Gongli
    Zhang, Baoshun
    Li, Haiou
    ELECTRONICS LETTERS, 2016, 52 (04) : 318 - U84
  • [23] High electron and hole mobility Al0.3Ga0.7As heterostructures grown in the same standard MBE setup
    Wieck, AD
    Reuter, D
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 51 - 54
  • [24] High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
    Muhtadi, Sakib
    Hwang, Seong Mo
    Coleman, Antwon
    Asif, Fatima
    Simin, Grigory
    Chandrashekhar, M. V. S.
    Khan, Asif
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (07) : 914 - 917
  • [25] 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates
    Alam, Md Tahmidul
    Chen, Jiahao
    Stephenson, Kenneth
    Mamun, Md Abdullah-Al
    Mazumder, Abdullah Al Mamun
    Pasayat, Shubhra S.
    Khan, Asif
    Gupta, Chirag
    APPLIED PHYSICS EXPRESS, 2025, 18 (01)
  • [26] High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors
    Baca, Albert G.
    Armstrong, Andrew M.
    Allerman, Andrew A.
    Klein, Brianna A.
    Douglas, Erica A.
    Sanchez, Carlos A.
    Fortune, Torben R.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (11) : S3010 - S3013
  • [27] Room temperature photoluminescence evaluation of In0.29Al0.7As/In0.3Ga0.7As/GaAsmetamorphic high electron mobility transistor structures
    Shang, X. Z.
    Wu, Jing
    Wang, W. C.
    Wang, W. X.
    Huang, Q.
    Zhou, J. M.
    SOLID-STATE ELECTRONICS, 2007, 51 (01) : 85 - 89
  • [28] Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double-Channel n-Al0.3Ga0.7N/GaN/i-AlxGa1-xN/GaN High-Electron-Mobility Transistors
    Cai, Jing
    Yao, Ruo-He
    Geng, Kui-Wei
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (10):
  • [29] Hall and photoluminescence studies of effects of the thickness of an additional In0.3Ga0.7As layer in the center of In0.15Ga0.85As/Al0.25Ga0.75As/GaAs high electron mobility transistors
    Zhao, F
    Liu, CY
    Yuan, S
    Jiang, J
    Chan, M
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (01) : 23 - 26
  • [30] Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
    Joh, Jungwoo
    del Alamo, Jesus A.
    Chowdhury, Uttiya
    Chou, Tso-Min
    Tserng, Hua-Quen
    Jimenez, Jose L.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (12) : 2895 - 2901
12345