Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

被引：11

作者：

Klein, Brianna A. ^{[1
]}

Baca, Albert G. ^{[1
]}

Lepkowski, Stephan M. ^{[1
]}

Nordquist, Christopher D. ^{[1
]}

Wendt, Joel R. ^{[1
]}

Allerman, Andrew A. ^{[1
]}

Armstrong, Andrew M. ^{[1
]}

Douglas, Erica A. ^{[1
]}

Abate, Vincent M. ^{[1
]}

Kaplar, Robert J. ^{[1
]}

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 09期

关键词：

HEMT; AlGaN; RF; saturation velocity;

D O I：

10.1007/s11664-019-07421-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate length dependent (80nm-5000mm) radio frequency measurements to extract saturation velocity are reported for Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistors fabricated into radio frequency devices using electron beam lithography. Direct current characterization revealed the threshold voltage shifting positively with increasing gate length, with devices changing from depletion mode to enhancement mode when the gate length was greater than or equal to 450nm. Transconductance varied from 10mS/mm to 25mS/mm, with the 450nm device having the highest values. Maximum drain current density was 268mA/mm at 10V gate bias. Scattering-parameter characterization revealed a maximum unity gain bandwidth (f(T)) of 28GHz, achieved by the 80nm gate length device. A saturation velocity value of 3.8x10(6)cm/s, or 35% of the maximum saturation velocity reported for GaN, was extracted from the f(T) measurements.

引用

页码：5581 / 5585

页数：5

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