Fermi level pinning effects at gate-dielectric interfaces influenced by interface state densities

被引：12

作者：

Hong Wen-Ting ^{[1
]}

Han Wei-Hua ^{[1
]}

Lyu Qi-Feng ^{[1
]}

Wang Hao ^{[1
]}

Yang Fu-Hua ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS B | 2015年 / 24卷 / 10期

基金：

中国国家自然科学基金;

关键词：

interface state density; Fermi-level pinning; MIS structure; effective work function; METAL-SEMICONDUCTOR INTERFACES; EFFECTIVE WORK FUNCTION; BAND OFFSETS; SILICIDE; ELECTRODES; OXIDES;

D O I：

10.1088/1674-1056/24/10/107306

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor (MOS) technology.

引用

页数：5

共 30 条

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