Probe Microscopy and Electron-Transport Properties of Thin Mo Epitaxial Films on Sapphire

被引：1

作者：

Fomin, L. A. ^{[1
]}

Malikov, I. V. ^{[1
]}

Berezin, V. A. ^{[1
]}

Chernykh, A. V. ^{[1
]}

Loginov, A. B. ^{[2
]}

Loginov, B. A. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia

[2] Moscow MV Lomonosov State Univ, Moscow 119991, Russia

[3] Natl Res Univ MIET, Moscow 124498, Russia

来源：

TECHNICAL PHYSICS | 2020年 / 65卷 / 11期

关键词：

SURFACE-INDUCED RESISTIVITY; POLYCRYSTALLINE FILMS; BOUNDARY SCATTERING; METALLIC-FILMS; GOLD-FILMS; CONDUCTIVITY; ROUGHNESS; MODEL; TECHNOLOGY; REFLECTION;

D O I：

10.1134/S1063784220110080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have analyzed the surface and electron-transport properties of thin molybdenum epitaxial films. Experimental results are compared with available quantum models of the influence of the film surface relief on their resistance.

引用

页码：1748 / 1754

页数：7

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