10-W single-chip class D power amplifier with very high efficiency for audio applications

被引:0
|
作者
Choi, SC [1 ]
Lee, JW [1 ]
Jin, WK [1 ]
Moon, BK [1 ]
Kim, S [1 ]
机构
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A one-chip integrated circuit (IC) of a 10-W class-D audio power amplifier with very high efficiency using CMOS technology is presented in this paper. A mixture of a class D output Stage and a bridge tied load (BTL) is the main topology of the proposed amplifier. The new 10-W IC audio power amplifier operates at 12 V with an efficiency of more than 90% and a total harmonic distortion (THD) of 0.1%. The amplifier is implemented in a 4-mu m double-metal, single-poly CMOS technology that is provided with relatively high voltage (12 V) MOSFETs.
引用
收藏
页码:S897 / S904
页数:8
相关论文
共 50 条
  • [1] A design of a 10-W single-chip class D audio amplifier with very high efficiency using CMOS technology
    Choi, SC
    Lee, JW
    Jin, WK
    So, JH
    Kim, S
    IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 1999, 45 (03) : 465 - 473
  • [2] A 2W BTL single-chip class-D power amplifier with very high efficiency for audio applications
    Lee, JW
    Lee, JS
    Lee, GS
    Kim, S
    ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL V: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY, 2000, : 493 - 496
  • [3] A 100 W 5.1-Channel Digital Class-D Audio Amplifier With Single-Chip Design
    Liu, Jia-Ming
    Chien, Shih-Hsiung
    Kuo, Tai-Haur
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (06) : 1344 - 1354
  • [4] A single-chip audio system with delta - Sigma DAC and class-D amplifier
    Yasuda, Akira
    Ohkubo, Akinori
    Ogata, Katsuya
    Ueno, Hajime
    Anzai, Takeshi
    Kimura, Takashi
    Ochiai, Koichiro
    Hamasaki, Toshihiko
    2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS, 2006, : 5740 - +
  • [5] A 10-W, High Efficiency, Broadband Harmonically Tuned GaN-HEMT Power Amplifier
    Sayed, Ahmed S.
    Ahmed, Hesham N.
    2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
  • [6] Power and spectral regrowth performance of 10-W and 16-W Ka-band power amplifiers with single-chip output stages
    DeLisio, MP
    Deckman, BC
    Cheung, CT
    Martin, SC
    Rollison, CJ
    Rosenberg, JJ
    Eisenberg, J
    Smith, G
    2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, : 839 - 842
  • [7] A fully integrated, single-chip handset power amplifier in SiGeBiCMOS for W-CDMA applications
    Rippke, I
    Duster, J
    Kornegay, K
    2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : A153 - A156
  • [8] A fully integrated, single-chip handset power amplifier in SiGeBiCMOS for W-CDMA applications
    Rippke, I
    Duster, J
    Kornegay, K
    2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, : 667 - 670
  • [9] A single-chip highly efficient CMOS class-e power amplifier for WLAN applications
    Du, Sichun
    Huang, Wenbin
    Wang, Chunhua
    Yin, Hongxia
    Liang, Zhiwen
    IETE JOURNAL OF RESEARCH, 2013, 59 (06) : 762 - 767
  • [10] A high efficiency PWM CMOS class-D audio power amplifier
    朱樟明
    刘帘曦
    杨银堂
    雷晗
    半导体学报, 2009, 30 (02) : 48 - 53