Growth and fundamentals of bulk β-Ga2O3 single crystals

被引：67
|
作者：
Mohamed, H. F. [1 ,2 ]
Xia, Changtai [1 ]
Sai, Qinglin [1 ]
Cui, Huiyuan [1 ]
Pan, Mingyan [1 ]
Qi, Hongji [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
[2] Sohag Univ, Fac Sci, Phys Dept, Sohag 82524, Egypt
来源：
JOURNAL OF SEMICONDUCTORS | 2019年 / 40卷 / 01期
基金：
中国国家自然科学基金;
关键词：
beta-Ga2O3; crystal structure; bulk crystal growth; applications; CONTROLLED PROFILE CRYSTALS; DOPED BETA-GA2O3; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; EDGE; MELT; 1ST-PRINCIPLES; CONDUCTIVITY; BETA-GA-2O-3;
D O I：
10.1088/1674-4926/40/1/011801
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The rapid development of bulk beta-Ga2O3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap (similar to 4.9 eV) and large breakdown electric field of about 8 MV/cm. Low cost and high quality of large beta-Ga2O3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of beta-Ga2O3 crystals in bulk form. We then describe the various methods for producing bulk beta-Ga2O3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.
引用
收藏
页数：9
相关论文
共 50 条
  • [1] Growth and fundamentals of bulk β-Ga2O3 single crystals
    H.F.Mohamed
    Changtai Xia
    Qinglin Sai
    Huiyuan Cui
    Mingyan Pan
    Hongji Qi
    Journal of Semiconductors, 2019, (01) : 13 - 21
  • [2] Growth of bulk β-Ga2O3 single crystals by the Czochralski method
    Galazka, Zbigniew
    JOURNAL OF APPLIED PHYSICS, 2022, 131 (01)
  • [3] Wet etching in β-Ga2O3 bulk single crystals
    Jin, Zhu
    Liu, Yingying
    Xia, Ning
    Guo, Xiangwei
    Hong, Zijian
    Zhang, Hui
    Yang, Deren
    CRYSTENGCOMM, 2022, 24 (06) : 1127 - 1144
  • [4] Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals
    Wang, Yan-shen
    Zhu, Ming-zhi
    Liu, Yuan
    CHINA FOUNDRY, 2024, : 491 - 506
  • [5] β-Ga2O3 bulk single crystals grown by a casting method
    Xia, Ning
    Liu, Yingying
    Wu, Dan
    Li, Lei
    Ma, Keke
    Wang, Jiabin
    Zhang, Hui
    Yang, Deren
    JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 935
  • [6] On the bulk β-Ga2O3 single crystals grown by the Czochralski method
    Galazka, Zbigniew
    Irmscher, Klaus
    Uecker, Reinhard
    Bertram, Rainer
    Pietsch, Mike
    Kwasniewski, Albert
    Naumann, Martin
    Schulz, Tobias
    Schewski, Robert
    Klimm, Detlef
    Bickermann, Matthias
    JOURNAL OF CRYSTAL GROWTH, 2014, 404 : 184 - 191
  • [7] Czochralski growth and characterization of β-Ga2O3 single crystals
    Galazka, Z.
    Uecker, R.
    Irmscher, K.
    Albrecht, M.
    Klimm, D.
    Pietsch, M.
    Bruetzam, M.
    Bertram, R.
    Ganschow, S.
    Fornari, R.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (12) : 1229 - 1236
  • [8] Growth and spectral characterization of β-Ga2O3 single crystals
    Zhang, Jungang
    Li, Bin
    Xia, Changtai
    Pei, Guangqing
    Deng, Qun
    Yang, Zhaohui
    Xu, Wusheng
    Shi, Hongsheng
    Wu, Feng
    Wu, Yongqing
    Xu, Jun
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2006, 67 (12) : 2448 - 2451
  • [9] Bulk Crystal Growth of Ga2O3
    Kuramata, Akito
    Koshi, Kimiyoshi
    Watanabe, Shinya
    Yamaoka, Yu
    Masui, Takekazu
    Yamakoshi, Shigenobu
    OXIDE-BASED MATERIALS AND DEVICES IX, 2018, 10533
  • [10] Luminescence and Conductivity of β-Ga2O3 and β-Ga2O3:Mg Single Crystals
    Vasyltsiv, V.
    Kostyk, L.
    Tsvetkova, O.
    Lys, R.
    Kushlyk, M.
    Pavlyk, B.
    Luchechko, A.
    ACTA PHYSICA POLONICA A, 2022, 141 (04) : 312 - 318
12345