Growth and fundamentals of bulk β-Ga2O3 single crystals

被引：68
作者：
Mohamed, H. F. [1 ,2 ]
Xia, Changtai [1 ]
Sai, Qinglin [1 ]
Cui, Huiyuan [1 ]
Pan, Mingyan [1 ]
Qi, Hongji [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
[2] Sohag Univ, Fac Sci, Phys Dept, Sohag 82524, Egypt
来源：
JOURNAL OF SEMICONDUCTORS | 2019年 / 40卷 / 01期
基金：
中国国家自然科学基金;
关键词：
beta-Ga2O3; crystal structure; bulk crystal growth; applications; CONTROLLED PROFILE CRYSTALS; DOPED BETA-GA2O3; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; EDGE; MELT; 1ST-PRINCIPLES; CONDUCTIVITY; BETA-GA-2O-3;
D O I：
10.1088/1674-4926/40/1/011801
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The rapid development of bulk beta-Ga2O3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap (similar to 4.9 eV) and large breakdown electric field of about 8 MV/cm. Low cost and high quality of large beta-Ga2O3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of beta-Ga2O3 crystals in bulk form. We then describe the various methods for producing bulk beta-Ga2O3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.
引用
收藏
页数：9
相关论文
共 68 条
  • [1] A reinvestigation of beta-gallium oxide
    Ahman, J
    Svensson, G
    Albertsson, J
    [J]. ACTA CRYSTALLOGRAPHICA SECTION C-CRYSTAL STRUCTURE COMMUNICATIONS, 1996, 52 : 1336 - 1338
  • [2] Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
    Aida, Hideo
    Nishiguchi, Kengo
    Takeda, Hidetoshi
    Aota, Natsuko
    Sunakawa, Kazuhiko
    Yaguchi, Yoichi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) : 8506 - 8509
  • [3] Oxygen sensitivity in gallium oxide thin films and single crystals at high temperatures
    Bartic, Marilena
    Toyoda, Yoshitaka
    Baban, Cristian-Ioan
    Ogita, Masami
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6A): : 5186 - 5188
  • [4] Certain physical properties of single crystals of tungsten, antimony, bismuth, tellurium, cadmium, zinc, and tin.
    Bridgman, PW
    [J]. PROCEEDINGS OF THE AMERICAN ACADEMY OF ARTS AND SCIENCES, 1925, 60 (1/14): : 305 - 383
  • [5] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .3. THEORY
    CHALMERS, B
    LABELLE, HE
    MLAVSKY, AI
    [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (08) : 681 - &
  • [6] GROWTH OF BETA-GA2O3 BY THE VERNEUIL TECHNIQUE
    CHASE, AB
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (09) : 470 - 470
  • [7] Czochralski J, 1917, Z PHYS CHEM-STOCH VE, V92, P219
  • [8] Ab initio study of N-doped β-Ga2O3 with intrinsic defects: the structural, electronic and optical properties
    Dong, Linpeng
    Jia, Renxu
    Li, Chong
    Xin, Bin
    Zhang, Yuming
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 712 : 379 - 385
  • [9] Czochralski growth and characterization of β-Ga2O3 single crystals
    Galazka, Z.
    Uecker, R.
    Irmscher, K.
    Albrecht, M.
    Klimm, D.
    Pietsch, M.
    Bruetzam, M.
    Bertram, R.
    Ganschow, S.
    Fornari, R.
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (12) : 1229 - 1236
  • [10] Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
    Galazka, Zbigniew
    Ganschow, Steffen
    Fiedler, Andreas
    Bertram, Rainer
    Klimm, Detlef
    Irmscher, Klaus
    Schewski, Robert
    Pietsch, Mike
    Albrecht, Martin
    Bickermann, Matthias
    [J]. JOURNAL OF CRYSTAL GROWTH, 2018, 486 : 82 - 90
1234567