Preparation and Characterization of Nickel Oxide Thin Films by Direct Current Reactive Magnetron Sputtering at Different Substrate Temperatures

被引：11

作者：

Reddy, A. Mallikarjuna ^{[1
,2
]}

Byun, Chang Woo ^{[2
]}

Joo, Seung Ki ^{[2
]}

Reddy, A. Sivasankar ^{[3
]}

Reddy, P. Sreedhara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[2] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea

[3] Kongju Natl Univ, Div Adv Mat Engn, Cheonan 330717, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2014年 / 10卷 / 05期

关键词：

reactive sputtering; substrate temperature; structural and morphological properties; optical properties; electrical properties; CRYSTALLOGRAPHIC ORIENTATIONS; ELECTROCHROMIC PROPERTIES; ELECTRICAL-PROPERTIES; NIO; DEPOSITION;

D O I：

10.1007/s13391-014-2181-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of substrate temperature on the properties NiO films, prepared by de reactive magnetron sputtering technique, is studied by various characterization methods. X-ray diffraction studies revealed that the crystal structure is highly influenced by the substrate temperature. The optical results indicated that the optical transmittance and band gap of the films increased with the increase of substrate temperature up to 523 K. The optical band gap of NiO films decreases from 3.82 to 3.70 eV with the increase of substrate temperature from 523 to 723 K. The electrical resistivity decreased with the increase of substrate temperature from 303 to 723 K, whereas carrier concentration and Hall mobility increased with increasing the substrate temperature.

引用

页码：887 / 892

页数：6

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