Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

被引：45

作者：

Liao, Yu-An ^{[1
]}

Hsu, Wei-Ting ^{[1
]}

Chiu, Pei-Chin ^{[2
]}

Chyi, Jen-Inn ^{[2
]}

Chang, Wen-Hao ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 05期

关键词：

gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; localised states; photoluminescence; radiative lifetimes; rapid thermal annealing; semiconductor quantum dots; spectral line narrowing; spectral line shift; time resolved spectra; LUMINESCENCE; EXCITONS;

D O I：

10.1063/1.3062979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-xSbx layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAsSb layer. Evidences of the evolution from type-II to type-I band alignments are obtained from time-resolved and power-dependent photoluminescence measurements. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAsSb type-II QDs.

引用

页数：3

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