Precise control of Si(001) initial oxidation by translational kinetic energy of O2 molecules

被引：0

作者：

Teraoka, Y ^{[1
]}

Yoshigoe, A ^{[1
]}

机构：

[1] Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, Mikazuki, Hyogo 6795148, Japan

来源：

MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS | 2001年

关键词：

D O I：

10.1109/IMNC.2001.984112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：108 / 109

页数：2

共 50 条

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[26] Si 2p and O 1s photoemission from oxidized Si(0 01) surfaces depending on translational kinetic energy of incident O2 molecules (vol 190, pg 75, 2002) [J].

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