Patterning surfaces by self-organized growth

被引：0

作者：

Kern, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

ATOMISTIC ASPECTS OF EPITAXIAL GROWTH | 2002年 / 65卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Much effort has been devoted to create semiconductor and metal nanostructures at surfaces. Their controlled fabrication, in particular the creation of lateral order, however, remains an experimental challenge. In this contribution we discuss the fabrication of nanostructures via self-organized growth at surfaces. Advantages and limitations of diffusion controlled molecular beam epitaxy are discussed and novel routes for the fabrication of ordered nanostructures are presented.

引用

页码：207 / 219

页数：13

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