A 2.02-5.16 fJ/Conversion Step 10 Bit Hybrid Coarse-Fine SAR ADC With Time-Domain Quantizer in 90 nm CMOS

被引:70
作者
Chen, Yan-Jiun [1 ]
Chang, Kwuang-Han [1 ]
Hsieh, Chih-Cheng [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
关键词
Hybrid; low power; low voltage; successive approximation register (SAR) analog-to-digital converter (ADC); time-to-digital converter (TDC); REDUCTION;
D O I
10.1109/JSSC.2015.2492781
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an ultra-low-voltage and power-efficient 10 bit hybrid successive approximation register (SAR) analog-to-digital converter (ADC). For reducing the digital-to-analog converter (DAC) capacitance and comparator requirement, we propose a hybrid architecture comprising a coarse 7 bit SAR ADC and fine 3.5 bit time-to-digital converter (TDC). The Vcm-based switching method is adopted for coarse conversion to reduce DAC power and maintain common mode. The residual voltage after coarse conversion is converted to time domain, and the fine TDC detects the least three bits with 0.5 bit redundancy by using a Vernier delay structure. Offset calibration and delay time locking are implemented to guarantee the ADC performance under process variation. The test chip, fabricated in 90 nm CMOS technology, occupied a core area of 0.04 mm(2). With a 0.4 V supply and a Nyquist rate input, the prototype consumed 200 nW at 250 kS/s and achieved an ENOB of 8.63 bits and a SFDR of 78.5 dB. The operation frequency was scalable from 250 kS/s to 4 MS/s. The converter had a power supply range of 0.4-0.7 V, and the figure of merit (FoM) were 2.02-5.16 fJ/conversion step.
引用
收藏
页码:357 / 364
页数:8
相关论文
共 19 条
[11]  
Liou CY, 2013, ISSCC DIG TECH PAP I, V56, P280, DOI 10.1109/ISSCC.2013.6487735
[12]   A 10-bit 50-MS/s SAR ADC With a Monotonic Capacitor Switching Procedure [J].
Liu, Chun-Cheng ;
Chang, Soon-Jyh ;
Huang, Guan-Ying ;
Lin, Ying-Zu .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (04) :731-740
[13]   A 0.5-V 5.2-fJ/Conversion-Step Full Asynchronous SAR ADC With Leakage Power Reduction Down to 650 pW by Boosted Self-Power Gating in 40-nm CMOS [J].
Sekimoto, Ryota ;
Shikata, Akira ;
Yoshioka, Kentaro ;
Kuroda, Tadahiro ;
Ishikuro, Hiroki .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (11) :2628-2636
[14]   A 0.5 V 1.1 MS/sec 6.3 fJ/Conversion-Step SAR-ADC With Tri-Level Comparator in 40 nm CMOS [J].
Shikata, Akira ;
Sekimoto, Ryota ;
Kuroda, Tadahiro ;
Ishikuro, Hiroki .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (04) :1022-1030
[15]  
Tai HY, 2014, ISSCC DIG TECH PAP I, V57, P196, DOI 10.1109/ISSCC.2014.6757397
[16]  
van der Goes F, 2014, ISSCC DIG TECH PAP I, V57, P200, DOI 10.1109/ISSCC.2014.6757399
[17]   A 10-bit Charge-Redistribution ADC Consuming 1.9 μW at 1 MS/s [J].
van Elzakker, Michiel ;
van Tuijl, Ed ;
Geraedts, Paul ;
Schinkel, Daniel ;
Klumperink, Eric A. M. ;
Nauta, Bram .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (05) :1007-1015
[18]   A 10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS [J].
Zhu, Yan ;
Chan, Chi-Hang ;
Chio, U-Fat ;
Sin, Sai-Weng ;
U, Seng-Pan ;
Martins, Rui Paulo ;
Maloberti, Franco .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (06) :1111-1121
[19]   A 6-to-10-Bit 0.5 V-to-0.9 V Reconfigurable 2 MS/s Power Scalable SAR ADC in 0.18 μm CMOS [J].
Zhu, Zhangming ;
Qiu, Zheng ;
Liu, Maliang ;
Ding, Ruixue .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2015, 62 (03) :689-696