Estimation of sp-d exchange constants revisited

被引:3
作者
Andriotis, Antonis N. [1 ]
Menon, Madhu [2 ,3 ]
机构
[1] FORTH, Inst Elect Struct & Laser, POB 1527, Iraklion 71110, Crete, Greece
[2] Univ Louisville, Conn Ctr Renewable Energy Res, Louisville, KY 40292 USA
[3] Univ Kentucky, Dept Phys & Astron, Lexington, KY 40506 USA
关键词
magnetic materials; first principles calculations; molecular dynamics; band structure;
D O I
10.1088/1361-648X/abdb12
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present a new computational method for estimating the sp-d exchange constant, J(eff)(sp-d), applicable to transition metal doped diluted magnetic semiconductors, transition metal oxides, and 2D- and 3D- dichalcogenides. The proposed method is based on results describing the variation of the magnetic features of a doped system with the variation of its magnetization density (M). The results for J(eff)(sp-d) (M) obtained with the proposed method are compared with the corresponding results, J(eff)(sp-d) (Delta E-VBM), obtained from estimations of the spin electron orbital splitting,.EVBM, at the valence band maximum (VBM). The latter is estimated in two ways; either directly from plots of the band structure calculations or by calculating the energy difference between the band-centers of the spin-up and spin-down electron density of states of the doped systems. Despite the inherent drawbacks in these two estimation methods for Delta E-VBM, they lead to equivalent results and the corresponding J(eff)(sp-d) (Delta E-VBM) are in good agreement with the J(eff)(sp-d) (M) ones. Ab initio results obtained for the 2D-MoS2 doped with 3d-series transition metals are presented to demonstrate the validity and applicability of the proposed computational schemes for obtaining J(eff)(sp-d). The proposed methods can be utilized as useful tools in the search of new materials for spintronics and valleytronics applications.
引用
收藏
页数:8
相关论文
共 40 条
[31]   Mn-doped monolayer MoS2: An atomically thin dilute magnetic semiconductor [J].
Ramasubramaniam, Ashwin ;
Naveh, Doron .
PHYSICAL REVIEW B, 2013, 87 (19)
[32]   First-principles study of the origin and nature of ferromagnetism in Ga1-xMnxAs -: art. no. 165206 [J].
Sanvito, S ;
Ordejón, P ;
Hill, NA .
PHYSICAL REVIEW B, 2001, 63 (16)
[33]   Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field [J].
Shkolnikov, YP ;
De Poortere, EP ;
Tutuc, E ;
Shayegan, M .
PHYSICAL REVIEW LETTERS, 2002, 89 (22)
[34]   Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla [J].
Stier, Andreas V. ;
McCreary, Kathleen M. ;
Jonker, Berend T. ;
Kono, Junichiro ;
Crooker, Scott A. .
NATURE COMMUNICATIONS, 2016, 7
[35]   Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides [J].
Xiao, Di ;
Liu, Gui-Bin ;
Feng, Wanxiang ;
Xu, Xiaodong ;
Yao, Wang .
PHYSICAL REVIEW LETTERS, 2012, 108 (19)
[36]  
Zeng HL, 2012, NAT NANOTECHNOL, V7, P490, DOI [10.1038/nnano.2012.95, 10.1038/NNANO.2012.95]
[37]   Synthesis of Co-Doped MoS2 Monolayers with Enhanced Valley Splitting [J].
Zhou, Jiadong ;
Lin, Junhao ;
Sims, Hunter ;
Jiang, Chongyun ;
Cong, Chunxiao ;
Brehm, John A. ;
Zhang, Zhaowei ;
Niu, Lin ;
Chen, Yu ;
Zhou, Yao ;
Wang, Yanlong ;
Liu, Fucai ;
Zhu, Chao ;
Yu, Ting ;
Suenaga, Kazu ;
Mishra, Rohan ;
Pantelides, Sokrates T. ;
Zhu, Zhen-Gang ;
Gao, Weibo ;
Liu, Zheng ;
Zhou, Wu .
ADVANCED MATERIALS, 2020, 32 (11)
[38]   Controlling magnetism of MoS2 sheets by embedding transition-metal atoms and applying strain [J].
Zhou, Yungang ;
Su, Qiulei ;
Wang, Zhiguo ;
Deng, Huiqiu ;
Zu, Xiaotao .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2013, 15 (42) :18464-18470
[39]   Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors [J].
Zhu, Z. Y. ;
Cheng, Y. C. ;
Schwingenschloegl, U. .
PHYSICAL REVIEW B, 2011, 84 (15)
[40]   Field-induced polarization of Dirac valleys in bismuth [J].
Zhu, Zengwei ;
Collaudin, Aurelie ;
Fauque, Benoit ;
Kang, Woun ;
Behnia, Kamran .
NATURE PHYSICS, 2012, 8 (01) :89-94