X-ray photoelectron spectroscopy characterization of radio frequency reactively sputtered carbon nitride thin films

被引：53

作者：

Kumar, S ^{[1
]}

Butcher, KSA ^{[1
]}

Tansley, TL ^{[1
]}

机构：

[1] MACQUARIE UNIV, DEPT PHYS, SEMICOND SCI & TECHNOL LABS, SYDNEY, NSW 2109, AUSTRALIA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 05期

关键词：

D O I：

10.1116/1.580188

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carbon nitride thin films prepared by radio frequency reactive sputtering of graphite in pure nitrogen plasma have been characterized by x-ray photoelectron spectroscopy (XPS) for probing the chemical bonding in the films. The multiple binding energy values obtained for the C 1s and N 1s photoelectrons in the film suggest that both the C and N atoms exhibit at least three types of chemical states, manifestative of different types of the C-N bonding present in the material. The presence of theoretically predicted beta-C3N4 phase in our C-N films has been suggested on the basis of XPS and optical data. (C) 1996 American Vacuum Society.

引用

页码：2687 / 2692

页数：6

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