Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and Vth Stability under Positive Gate Bias Stress in AlGaN/GaN MIS-HEMTs

被引：14

作者：

Calzolaro, Anthony ^{[1
,2
]}

Szabo, Nadine ^{[2
]}

Grosser, Andreas ^{[2
]}

Gaertner, Jan ^{[2
]}

Mikolajick, Thomas ^{[1
,2
]}

Wachowiak, Andre ^{[2
]}

机构：

[1] Tech Univ Dresden, Chair Nanoelect, D-01062 Dresden, Germany

[2] Tech Univ Dresden, NaMLab gGmbH, Noethnitzer Str 64a, D-01187 Dresden, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 02期

关键词：

AlGaN; GaN; dielectric; III-nitride interfaces; interface traps; metal– insulator– semiconductor high electron mobility transistors; V; (th) instability; GAN; PASSIVATION;

D O I：

10.1002/pssa.202000585

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Trap states at the dielectric/GaN interface of AlGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) can cause threshold voltage (V-th) instability especially under positive gate bias stress. Herein, the influence of O-2 plasma surface preconditioning (SPC) before the atomic layer deposition of the Al2O3 gate dielectric and of N-2 postmetallization anneal (PMA) after gate metallization on the Al2O3/GaN interface quality is investigated. The interface is characterized by multifrequency capacitance-voltage measurements which show a smaller frequency dispersion after the employment of SPC and PMA treatments with a reduction of the interface trap density D-it to a value in the order of 2 x 10(12) cm(-2) eV(-1) near the conduction band edge. The effectiveness of SPC and PMA is demonstrated in Al2O3/AlGaN/GaN MIS-HEMTs by pulsed current-voltage measurements which reveal improved V-th stability.

引用

页数：7

共 32 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].