Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy

被引：42
作者：
Jalonen, M
Toivonen, M
Savolainen, P
Kongas, J
Pessa, M
机构：
[1] Tampere University of Technology, Semilab, Department of Physics, FIN-33101 Tampere
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 04期
关键词：
D O I：
10.1063/1.119584
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have examined the influence of rapid thermal annealing on the performance characteristics of GaInP/AlGaInP quantum well lasers which were grown by all-solid-source molecular beam epitaxy. It was found that when the laser structures were annealed the threshold current densities of the lasers decreased significantly. This improvement in lasing performance could be associated with the possibility that annealing removed nonradiative recombination centers from the quantum wells. The emission wavelength, differential quantum efficiency, and characteristic temperature were not affected to any remarkable extent, indicating that the interdiffusion of group-III elements did not damage the structures. (C) 1997 American Institute of Physics.
引用
收藏
页码：479 / 481
页数：3
相关论文
共 11 条
  • [1] STRAINED GAXIN1-XP/(ALGA)0.5IN0.5P HETEROSTRUCTURES AND QUANTUM-WELL LASER-DIODES
    BOUR, DP
    GEELS, RS
    TREAT, DW
    PAOLI, TL
    PONCE, F
    THORNTON, RL
    KRUSOR, BS
    BRINGANS, RD
    WELCH, DF
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 593 - 607
  • [2] INFLUENCE OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF STRAINED GAINAS QUANTUM-WELL LASERS
    MAUREL, P
    NAGLE, J
    HIRTZ, JP
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A): : 1056 - 1059
  • [3] PESSA M, IN PRESS THIN SOLID
  • [4] HIGH-POWER CW OPERATION OF ALGAINP LASER-DIODE ARRAY OF 640 NM
    SKIDMORE, JA
    EMANUEL, MA
    BEACH, RJ
    BENETT, WJ
    FREITAS, BL
    CARLSON, NW
    SOLARZ, RW
    BOUR, DP
    TREAT, DW
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (02) : 133 - 135
  • [5] RELIABLE RED-EMITTING LASER-DIODES GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
    TAKAHASHI, K
    TAKEOKA, T
    KAN, Y
    TSUNODA, A
    TANI, K
    HOSODA, M
    MATSUI, S
    YAMAMOTO, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1333 - 1337
  • [6] High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy
    Tappura, K
    Aarik, J
    Pessa, M
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) : 319 - 321
  • [7] ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED-LAYER INGAAS/GAINASP/GAINP QUANTUM-WELL LASERS (LAMBDA=980 NM)
    TOIVONEN, M
    JALONEN, M
    SALOKATVE, A
    NAPPI, J
    SAVOLAINEN, P
    PESSA, M
    ASONEN, H
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (16) : 2332 - 2334
  • [8] ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF 1.35 MU-M WAVELENGTH STRAINED-LAYER GALNASP QUANTUM-WELL LASER
    TOIVONEN, M
    SALOKATVE, A
    JALONEN, M
    NAPPI, J
    ASONEN, H
    PESSA, M
    MURISON, R
    [J]. ELECTRONICS LETTERS, 1995, 31 (10) : 797 - 799
  • [9] High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy
    Toivonen, M
    Savolainen, P
    Pessa, M
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (12) : 1923 - 1926
  • [10] VARRIANO JA, 1992, P IEEE, V1788, P21
12