FAR INFRARED LASERS WITHOUT INVERSION BASED ON INTERSUBBAND TRANSITIONS IN SEMICONDUCTORS

被引：0
作者：
Pereira, M. F. [1 ]
机构：
[1] Sheffield Hallam Univ, Mat & Engn Inst, Howard St, Sheffield S1 1WB, S Yorkshire, England
来源：
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES | 2009年
关键词：
QUANTUM-CASCADE LASERS; CONTINUOUS-WAVE OPERATION; LIGHT-HOLE; ELECTROLUMINESCENCE; GAIN;
D O I：
10.1142/9789814280365_0133
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
This paper summarizes recent developments in the search for materials and designs that can lead to lasing without global population inversion in the far infrared based on intersubband devices. The recent proposal of using the strong k-dependence of the transverse electric dipole moment to filter local inversion of nonequilibrium holes in the valence subbands of III-V quantum wells is discussed.
引用
收藏
页码：565 / +
页数：2
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