Energy storage in BaBi4Ti4O15 thin films with high efficiency

A ferroelectric film with slim polarization-electric (P-E) hysteresis loops, showing small remanent polarization (P-r) and large saturated polarization (Ps), is desired to obtain high recoverable energy density (U-re) and efficiency (eta) in thin film capacitors. Here, small P-r and large P-m values are achieved in BaBi4Ti4O15 thin films through modulating film grain size. A large U-re of 44.3 J/cm(3) as well as a high eta of 87.1% is obtained. In addition, the derived BaBi4Ti4O15 thin films show excellent energy storage performance in wide frequency range, thermal stability, and fatigue endurance. These results suggest that BaBi4Ti4O15 films can be considered as a candidate for dielectric energy storage capacitors, and the route through grain size optimization is a promising strategy to improve the capacitive performance of ferroelectric materials. Published under license by AIP Publishing.