Structure Study of Bulk Nanograined Thermoelectric Bismuth Antimony Telluride

被引：219

作者：

Lan, Yucheng ^{[2
]}

Poudel, Bed ^{[3
]}

Ma, Yi ^{[2
,3
]}

Wang, Dezhi ^{[2
]}

Dresselhaus, Mildred S. ^{[4
,5
]}

Chen, Gang ^{[1
]}

Ren, Zhifeng ^{[2
]}

机构：

[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

[2] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

[3] GMZ Energy Inc, Newton, MA 02458 USA

[4] MIT, Dept Phys, Cambridge, MA 02139 USA

[5] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 04期

基金：

美国国家科学基金会;

关键词：

MERIT; FIGURE; DEVICES; ALLOYS; COSB3;

D O I：

10.1021/nl803235n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The microstructures of bulk nanograined p-type bismuth antimony telluride with a thermoelectric dimensionless figure-of-merit ZT = 1.4 are investigated using transmission electron microscopy. It is found that the bulk material contains both nano- and microsized grains. Between the nanograins, bismuth-rich interface regions with a 4 nm thickness were detected. In addition, nanoprecipitates as well as other defects are also found to be embedded in the nanograins. The high ZT is attributed to the slight increase in the electrical conductivity, and to the large decrease of the thermal conductivity.

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页码：1419 / 1422

页数：4

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