A novel MOSFET with vertical signal-transfer capability for 3D-structured CMOS image sensors

被引：8

作者：

Goto, Masahide ^{[1
,2
]}

Hagiwara, Kei ^{[1
]}

Iguchi, Yoshinori ^{[1
]}

Ohtake, Hiroshi ^{[1
]}

Saraya, Takuya ^{[2
]}

Toshiyoshi, Hiroshi ^{[2
]}

Hiramoto, Toshiro ^{[2
]}

机构：

[1] NHK Sci & Technol Res Labs, Setagaya Ku, Tokyo 1578510, Japan

[2] Univ Tokyo, Meguro Ku, Tokyo 1538505, Japan

来源：

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING | 2014年 / 9卷 / 03期

基金：

中国国家自然科学基金;

关键词：

fully depleted silicon-on-insulator; three-dimensional integration; CMOS image sensor; More-than-Moore; MOSFET; SOI;

D O I：

10.1002/tee.21974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a novel MOSFET that can transfer signals vertically without through-silicon vias but by using a fully depleted silicon-on-insulator (FDSOI) structure with its source region connected to the back electrodes as well as the front ones. A prototype MOSFET fabricated using the backside anisotropic wet etching technique has confirmed that the electrical characteristics measured from the front and the back electrodes are identical. The subthreshold factor S of the prototype was found to be 64.5 mV/decade, suggesting a good switching performance. Since the double-sided MOSFET has vertical signal-transfer capability and excellent operating characteristics, it is expected to contribute to developing a More-than-Moore type device of three-dimensional integration such as pixel-parallel image sensors. (c) 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

引用

页码：329 / 333

页数：5

共 20 条

[1] A digital pixel image sensor for real-time readout [J].

Andoh, F ;

Shimamoto, H ;

Fujita, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (11) :2123-2127

[2] CMOS image sensors: Electronic camera-on-a-chip [J].

Fossum, ER .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (10) :1689-1698

[3] Future electron devices and SOI technology - Semi-planar SOI MOSFETs with sufficient body effect [J].

Hiramoto, T ;

Saito, T ;

Nagumo, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B) :1975-1978

[4] Device design of nanoscale MOSFETs considering the suppression of short channel effects and characteristics variations [J].

Hiramoto, Toshiro ;

Nagumo, Toshiharu ;

Ohtou, Tetsu ;

Yokoyama, Kouki .

IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (04) :836-841

[5]

Huang S., 2009, IEEE INT IM SENS WOR, P308

[6]

Jacob Baker R, 2010, CMOS CIRCUIT DESIGN, P148

[7]

Katti G, 2009, IEDM BALT MD US, P1441

[8]

Kiyoyama K, 2011, IEEE INT 3D SYST INT, P5

[9] A 10 000 frames/s CMOS digital pixel sensor [J].

Kleinfelder, S ;

Lim, S ;

Liu, XQ ;

El Gamal, A .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (12) :2049-2059

[10] A high-speed, 240-frames/s, 4.1-mpixel CMOS sensor [J].

Krymski, AI ;

Bock, NE ;

Tu, NR ;

Van Blerkom, D ;

Fossum, ER .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) :130-135

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