Metal halide perovskites for resistive switching memory devices and artificial synapses

被引：88

作者：

Li, Bixin ^{[1
,2
,3
]}

Hui, Wei ^{[1
,2
]}

Ran, Xueqin ^{[1
,2
]}

Xia, Yingdong ^{[1
,2
]}

Xia, Fei ^{[1
,2
]}

Chao, Lingfeng ^{[1
,2
]}

Chen, Yonghua ^{[1
,2
]}

Huang, Wei ^{[1
,2
,4
,5
,6
]}

机构：

[1] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect KLOFE, Nanjing 211816, Jiangsu, Peoples R China

[2] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, IAM, Nanjing 211816, Jiangsu, Peoples R China

[3] Hunan First Normal Univ, Lab Coll Phys, Dept Sci Educ, Changsha 410205, Hunan, Peoples R China

[4] NPU, IFE, Xian 710072, Shaanxi, Peoples R China

[5] Nanjing Univ Posts & Telecommun, KLOEID, Nanjing 210023, Jiangsu, Peoples R China

[6] Nanjing Univ Posts & Telecommun, IAM, Nanjing 210023, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2019年 / 7卷 / 25期

关键词：

METHYLAMMONIUM LEAD IODIDE; SOLAR-CELLS; MEMRISTIVE DEVICES; CRYSTALLIZATION; MECHANISMS; STABILITY; BEHAVIOR; FILM;

D O I：

10.1039/c9tc02233c

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rapid progress of digital communications in the Big Data and Internet of things has stimulated the exploration of next-generation data storage devices. Among various candidates, resistive switching (RS) memory devices and artificial synapses are in the spotlight due to their low power consumption, downscaling potential, and fast operation speed. The exceptional electronic and mechanical characteristics of metal halide perovskites (MHPs) have greatly promoted their application in nonvolatile high density, low-cost, and flexible memory devices. Here, we distill the current state-of-the-art and highlight recent advances of MHP based RS memory devices and artificial synapses. The general structure and characteristics of RS memory devices are first introduced. Afterwards we discuss the excellent memory behaviors accompanied by detailed working mechanisms. Finally, the current challenges and future development prospects are also discussed. This review article is expected to pave the way in the rational design of MHP based memory devices and artificial synapses with unprecedented performance improvement.

引用

页码：7476 / 7493

页数：18