Edge Couplers With Relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers With SOI Waveguides

被引:27
|
作者
Romero-Garcia, Sebastian [1 ]
Marzban, Bahareh [1 ]
Merget, Florian [1 ]
Shen, Bin [1 ]
Witzens, Jeremy [1 ]
机构
[1] Rhein Westfal TH Aachen, Integrated Photon Lab, D-52074 Aachen, Germany
基金
欧洲研究理事会;
关键词
Nanophotonics; integrated optics; integrated optoelectronics; silicon photonics; semiconductor lasers; microassembly;
D O I
10.1109/JSTQE.2013.2292523
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-Perot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 +/- 0.3 dB and 3.1 +/- 0.3 dB, as well as excellent 1 dB loss placement tolerance range of respectively 2.8 mu m and 3.8 mu m (worst case over both in-plane axes) have been measured for the two devices. Back-reflections to the laser are below -20 dB for both devices within the 1 dB misalignment range. Devices were fabricated with 193 nm DUV optical lithography and are compatible with mass-manufacturing with mainstream CMOS technology.
引用
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页数:11
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