Adsorption and decomposition of ethylene (C2H4) on GaAs(100)

被引:5
作者
Chen, Y [1 ]
Barnard, JC [1 ]
Siller, L [1 ]
Schmidt, J [1 ]
Palmer, RE [1 ]
机构
[1] Univ Birmingham, Sch Phys & Astron, Nanoscale Phys Res Lab, Birmingham B15 2TT, W Midlands, England
基金
英国工程与自然科学研究理事会;
关键词
adsorption; electron energy loss spectroscopy; electron stimulated desorption (ESD); hydrocarbons; III-V semiconductors;
D O I
10.1016/S0039-6028(99)00859-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An understanding of the interaction of organic molecules with semiconductors is important for both fundamental research and technological applications. With such knowledge, it may be possible to bond a wide range of useful organic molecules directly to the semiconductor surface. The adsorption of ethylene, C2H4, on the arsenic-terminated GaAs(100) surface has been studied using high-resolution electron energy-loss spectroscopy (HREELS). We find that ethylene molecules are chemisorbed on the surface in a near-sp(3) hybridisation state at 300 K. Conversion from the physisorption state at 100 K to the chemisorption state is observed when the sample temperature is raised to room temperature. The sticking coefficient for ethylene on the surface at 300 K is about two orders of magnitude lower than that at 100 K. The electron-stimulated desorption (ESD) with low-energy electrons (0-50 eV) of the physisorbed species leads to quite different behaviour than heating; specifically, the desorption of H+ and CH3+ ions is due to C-H and C=C bond scission. respectively. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:192 / 198
页数:7
相关论文
共 23 条
[1]   REACTION CHEMISTRY AT THE SI(100) SURFACE - CONTROL THROUGH ACTIVE-SITE MANIPULATION [J].
BOZACK, MJ ;
CHOYKE, WJ ;
MUEHLHOFF, L ;
YATES, JT .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3750-3754
[2]  
BOZACK MJ, 1996, SURF SCI LETT, V177, pL933
[3]  
BURKE TM, UNPUB
[4]   Weak adsorption of ethylene on GaAs(100) [J].
Chen, Y ;
Schmidt, J ;
Siller, L ;
Barnard, JC ;
Palmer, RE .
PHYSICAL REVIEW B, 1998, 58 (03) :1177-1180
[5]   DIRECT DETERMINATION OF ABSOLUTE MONOLAYER COVERAGES OF CHEMISORBED C2H2 AND C2H4 ON SI(100) [J].
CHENG, CC ;
WALLACE, RM ;
TAYLOR, PA ;
CHOYKE, WJ ;
YATES, JT .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) :3693-3699
[6]   THERMAL-STABILITY OF THE CARBON CARBON BOND IN ETHYLENE ADSORBED ON SI(100) - AN ISOTOPIC MIXING STUDY [J].
CHENG, CC ;
CHOYKE, WJ ;
YATES, JT .
SURFACE SCIENCE, 1990, 231 (03) :289-296
[7]   ADSORPTION AND THERMAL-BEHAVIOR OF ETHYLENE ON SI(100)-(2X1) [J].
CLEMEN, L ;
WALLACE, RM ;
TAYLOR, PA ;
DRESSER, MJ ;
CHOYKE, WJ ;
WEINBERG, WH ;
YATES, JT .
SURFACE SCIENCE, 1992, 268 (1-3) :205-216
[8]   SURFACE OPTICAL PHONONS AND HYDROGEN CHEMISORPTION ON POLAR AND NON-POLAR FACES OF GAAS, INP, AND GAP [J].
DUBOIS, LH ;
SCHWARTZ, GP .
PHYSICAL REVIEW B, 1982, 26 (02) :794-802
[9]   HREELS STUDIES OF C2H4 ADSORPTION ON III-V SEMICONDUCTOR SURFACES [J].
FITZGERALD, ET ;
FOORD, JS .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 :S347-S350
[10]  
FUCHS R, 1965, PHYS REV, V140, P2076