Type conversion in irradiated silicon diodes

被引：22

作者：

Taylor, SJ ^{[1
]}

Yamaguchi, M ^{[1
]}

Yang, MJ ^{[1
]}

Imaizumi, M ^{[1
]}

Matsuda, S ^{[1
]}

Kawasaki, O ^{[1
]}

Hisamatsu, T ^{[1
]}

机构：

[1] NASDA,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 16期

关键词：

D O I：

10.1063/1.118946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed conversion from p- to n-type of the base layer of n+\p\p + silicon diodes irradiated with more than roughly 5 x 10(16) cm(-2) 1 MeV electrons. Annealing for 15 min at 200 degrees C results in a recovery of p-type conduction in diodes in which type conversion had been induced. Solar cells which employ the same diode structure are severely degraded by irradiation with more than 10(16) cm(-2) 1 MeV electrons and show only a weak infrared response after irradiation with 10(17) cm(-2) 1 MeV electrons, consistent with the creation of an n+\n\p structure due to type conversion. (C) 1997 American Institute of Physics.

引用

页码：2165 / 2167

页数：3

共 9 条

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