Stability of semiconducting transition metal dichalcogenides irradiated by soft X-rays and low energy electrons

被引：5

作者：

Walker, Roger C., II ^{[1
]}

Bhimanapati, Ganesh R. ^{[1
]}

Shi, Tan ^{[2
]}

Zhang, Kehao ^{[1
]}

Eichfeld, Sarah M. ^{[1
]}

Jovanovic, Igor ^{[2
]}

Robinson, Joshua A. ^{[1
]}

机构：

[1] Penn State Univ, Ctr Dimens Layered Mat 2, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 17期

关键词：

MOLYBDENUM-DISULFIDE; RADIATION-DAMAGE; FLOOD GUN; SURFACE; SPECTROSCOPY; GRAPHENE; NITRIDE; AL2O3; OXIDE; WSE2;

D O I：

10.1063/1.4982626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semiconducting two-dimensional materials (2DMs) such as molybdenum disulfide and tungsten diselenide have attracted significant attention due to their unique electronic properties. Understanding their nanoscale radiation tolerance is needed for developing radiation-hardened nanoelectronics. Here, we report that the XPS environment of soft X-ray (E = 1.486 keV) exposure in a vacuum combined with a low energy electron flood gun leads to charge accumulation in the 2D layers over time, with little impact on layer chemistry. Additionally, the charging that induced the 2DM/substrate heterostructure depends more on the growth technique, the size of as-grown domains, and the surface coverage of the 2DM than the conductivity of the substrate. Charging is minimized for the combination of a continuous 2DM film and strong coupling between the 2DM and the substrate. Published by AIP Publishing.

引用

页数：5

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