Improvement of a-Si solar cell properties by using SnO2:F TCO films coated with an ultra-thin TiO2 layer prepared by APCVD

被引：44

作者：

Kambe, M. ^{[1
]}

Fukawa, M. ^{[1
]}

Taneda, N. ^{[1
]}

Sato, K. ^{[1
]}

机构：

[1] Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 18-19期

关键词：

transparent conductive oxide; titanium oxide; open circuit voltage;

D O I：

10.1016/j.solmat.2006.06.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

TiO2-overcoated SnO2:F transparent conductive oxide films were prepared by atmospheric pressure chemical vapor deposition (APCVD) and an effect of TiO2 layer thickness on a-Si solar cell properties was investigated. The optical properties and the structure of the TiO2 films were evaluated by spectroscopic ellipsometry and X-ray difractometry. a-Si thin film solar cells were fabricated on the SnO2:F films over-coated with TiO2 films of various thicknesses (1.0, 1.5 and 2.0 nm) and I-V characteristics of these cells were measured under 1 sun (100mW/cm(2) AM-1.5) illumination. It was found that the TiO2 film deposited by APCVD has a refractive index of 2.4 at 550 nm and anatase crystal structure. The conversion efficiency of the a-Si solar cell fabricated on the 2.0 nm TiO2 overcoated SnO2:F film increased by 3%, which is mainly attributed to an increase in open circuit voltage (V-OC) of 30 mV. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：3014 / 3020

页数：7

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