Understanding and modelling the PBTI reliability of thin-film IGZO transistors

被引：36

作者：

Chasin, A. ^{[1
]}

Franco, J. ^{[1
]}

Triantopoulos, K. ^{[1
,2
]}

Dekkers, H. ^{[1
]}

Rassoul, N. ^{[1
]}

Belmonte, A. ^{[1
]}

Smets, Q. ^{[1
]}

Subhechha, S. ^{[1
]}

Claes, D. ^{[1
,2
]}

van Setten, M. J. ^{[1
]}

Mitard, J. ^{[1
]}

Delhougne, R. ^{[1
]}

Afanas'ev, V ^{[1
,2
]}

Kaczer, B. ^{[1
]}

Kar, G. S. ^{[1
]}

机构：

[1] IMEC, Leuven, Belgium

[2] KULeuven, Leuven, Belgium

来源：

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2021年

关键词：

D O I：

10.1109/IEDM19574.2021.9720666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the impact of the gate-dielectric on the Positive Bias Temperature Instability (PBTI) of IGZO thin-film transistors (TFT). We show that PBTI is controlled by the gate-dielectric pre-existent electron traps and its hydrogen content. The degradation process can be composed of up to four different mechanisms with different time kinetics, voltage acceleration factors and activation energies. A simplified physics-based model is used to reproduce stress and relaxation traces recorded in a wide range of test conditions. Gate-dielectric optimization enables scaled EOT (2.5nm) IGZO TFT to achieve a record lifetime of similar to 1 year continuous operation at 95 degrees C and V-ov = 1V, with a strict failure criterion of vertical bar Delta V-th vertical bar<30mV.

引用

页数：4

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