Potassium-doped barium strontium titanate films were prepared, and the effect of K-doped concentration on the structures and dielectric properties has been studied. XRD patterns exhibit that all films mainly grow along (110) orientation and reveal a cubic ABO(3) perovskite structure. K+ ions first enter A sites then B sites, but the lattice parameters are a little larger than that of the pure film. The doped films show average grain sizes of 18-27 +/- 3 nm. K-doping enhances crystallization, and 5% mat ratio corresponds to a moderate crystallization. XPS reveals that non-perovskite structures on doped film surfaces are less than that on the pure film surface, first decrease then increase with increasing concentration, and are associated with adsorbed carbon contaminants. The dielectric properties are significantly improved with high tunable capabilities. 5% doping corresponds to the best combination of dielectric properties, which is consistent with the structures. (C) 2014 Elsevier Ltd. All rights reserved.
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
Liu, Xingbing
Deng, Xiaoling
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
Deng, Xiaoling
Liu, Kaihua
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
Liu, Kaihua
Cai, Wei
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
Cai, Wei
Fu, Chunlin
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, M. W.
Ngo, E.
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ngo, E.
Hubbard, C.
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hubbard, C.
Hirsch, S. G.
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hirsch, S. G.
Ivill, M.
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ivill, M.
Sarney, W. L.
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US Army Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Sarney, W. L.
Zhang, J.
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Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Zhang, J.
Alpay, S. P.
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Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
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State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Sichuan, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Sichuan, Peoples R ChinaState Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Gao, Libin
Guan, Zhipu
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State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Sichuan, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Sichuan, Peoples R ChinaState Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Guan, Zhipu
Huang, Shixian
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Sch Mat & Energy, Chengdu 610054, Sichuan, Peoples R ChinaState Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Huang, Shixian
Liang, Kexin
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State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Sichuan, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Sichuan, Peoples R ChinaState Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Liang, Kexin
Chen, Hongwei
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State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Sichuan, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Sichuan, Peoples R ChinaState Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Chen, Hongwei
Zhang, Jihua
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State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Sichuan, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Sichuan, Peoples R ChinaState Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China