Mid-infrared photoluminescence of PbSe/PbSrSe multiple quantum wells grown by molecular beam epitaxy

Mid-Infrared photoluminescence of PbSe/PbSrSe multiple quantum wells (MQWs) grown by molecular beam epitaxy is studied. High-order satellite peaks are observed by high resolution X-ray diffraction, which indicates the quantum well structure has sharp interfaces. Temperature dependence of photoluminescence spectra shows that the MQWs make good confinement of electrons and holes. At the same measurement temperature, the photoluminescence peaks of the MQW sample show a clear blue shift compared with that of the bulk PbSe material. We find that the intensity of photoluminescence is dependent on the measurement temperature. When temperature increases from 150 K to 230 K, the PL intensity reaches its maximum at 230 K, and with further increasing the intensity decreases slowly. We can still observe strong PL intensity above room temperature, which indicates MQWs have the potential to be used in room-temperature-operating mid-infrared optoelectronic devices.