Novel magnetic random access memory cell consisting of magnetic tunnel junction connected in parallel with negative differential resistance device

被引：7
作者：
Uemura, T [1 ]
Honma, S [1 ]
Marukame, T [1 ]
Yamamoto, M [1 ]
机构：
[1] Hokkaido Univ, Div Elect & Informat Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 4B期
关键词：
MRAM; magnetic tunnel junction; negative differential resistance; tunnel diode; tunnel magnetoresistance;
D O I：
10.1143/JJAP.43.2114
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel magnetic random access memory (MRAM) cell consisting of a magnetic tunnel junction (MTJ) and negative differential resistance (NDR) device connected in parallel is described. The NDR characteristics are used to increase the effective magnetoresistance (MR) ratio of the MTJ. Circuit simulations were performed for the memory cell with a triple-barrier resonant-tunneling diode (RTD) to confirm the efficacy of the basic operation. Furthermore, a hybrid circuit built from the CoFe-based MTJ and GaAs-based interband tunnel diode was fabricated. The circuit showed that the effective MR ratio was enhanced almost tenfold from its original value of 11% to 103%.
引用
收藏
页码：2114 / 2117
页数：4
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