Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

被引：24

作者：

Chen, Wei-Chung ^{[1
,2
]}

Hsu, Po-Ching ^{[1
,2
]}

Chien, Chih-Wei ^{[1
,2
]}

Chang, Kuei-Ming ^{[1
,2
]}

Hsu, Chao-Jui ^{[1
,2
]}

Chang, Ching-Hsiang ^{[1
,2
]}

Lee, Wei-Kai ^{[1
,2
]}

Chou, Wen-Fang ^{[1
,2
]}

Hsieh, Hsing-Hung ^{[3
]}

Wu, Chung-Chih ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Elect Engn, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Innovat Photon Adv Res Ctr i PARC, Taipei 10617, Taiwan

[3] Polyera Taiwan Corp, Hsinchu 302, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2014年 / 47卷 / 36期

关键词：

oxide semiconductors; diode; rectifier; flexible electronics; RFID; PRINTED ORGANIC TRANSISTORS; OXIDE SEMICONDUCTORS; POWER-TRANSMISSION; CUPROUS-OXIDE; FABRICATION; DEPOSITION; PENTACENE; CU2O;

D O I：

10.1088/0022-3727/47/36/365101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu2O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu2O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 x 10(4) at +/- 1.2 V, a high forward current of 1 A cm(-2) around 1V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu2O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics.

引用

页数：7

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