Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure

被引:176
作者
Hanbicki, Aubrey T. [1 ]
Chuang, Hsun-Jen [1 ]
Rosenberger, Matthew R. [1 ]
Hellberg, C. Stephen [1 ]
Sivaram, Saujan V. [1 ]
McCreary, Kathleen M. [1 ]
Mazin, Igor I. [1 ]
Jonker, Berend T. [1 ]
机构
[1] Naval Res Lab, Mat Sci & Technol Div, Washington, DC 20375 USA
关键词
transition metal dichalcogenides; 2D heterostructure; MoSe2; WSe2; two-dimensional materials; valley polarization; photoluminescence; density functional theory; POLARIZATION; MOS2;
D O I
10.1021/acsnano.8b01369
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An emerging class of semiconductor heterostructures involves stacking discrete monolayers such as transition metal dichalcogenides (TMDs) to form van der Waals heterostructures. In these structures, it is possible to create interlayer excitons (ILEs), spatially indirect, bound electron hole pairs with the electron in one TMD layer and the hole in an adjacent layer. We are able to clearly resolve two distinct emission peaks separated by 24 meV from an ILE in a MoSe2/WSe2 heterostructure fabricated using stateof-the-art preparation techniques. These peaks have nearly equal intensity, indicating they are of common character, and have opposite circular polarizations when excited with circularly polarized light. Ab initio calculations successfully account for these observations: they show that both emission features originate from excitonic transitions that are indirect in momentum space and are split by spin orbit coupling. Also, the electron is strongly hybridized between both the MoSe2 and WSe2 layers, with significant weight in both layers, contrary to the commonly assumed model. Thus, the transitions are not purely interlayer in character. This work represents a significant advance in our understanding of the static and dynamic properties of TMD heterostructures.
引用
收藏
页码:4719 / 4726
页数:8
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