GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm

被引：4

作者：

Aluev, A. V. ^{[1
]}

Leshko, A. Yu. ^{[2
]}

Lyutetskiy, A. V. ^{[2
]}

Pikhtin, N. A. ^{[2
]}

Slipchenko, S. O. ^{[2
]}

Fetisova, N. V. ^{[2
]}

Chelny, A. A. ^{[1
]}

Shamakhov, V. V. ^{[1
]}

Simakov, V. A. ^{[2
]}

Tarasov, I. S. ^{[2
]}

机构：

[1] POLYUS Res & Dev Inst, Moscow 117342, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

SEPARATE-CONFINEMENT HETEROSTRUCTURES; INTERNAL OPTICAL LOSS; WAVE-GUIDE; SEMICONDUCTOR-LASERS; OUTPUT POWER; LAMBDA;

D O I：

10.1134/S1063782609040241

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The MOCVD epitaxy has been used to grow the GaInAsP/GaInP/AlGaInP laser heterostructures with a narrow symmetric waveguide and broad asymmetric waveguide. Mesa stripe 100 mu m aperture diode lasers emitting at 808 nm were manufactured. It is shown that a SiO2/Si dielectric mirror coating of Fabry-Perot faces of Al-free semiconductor lasers does not result in catastrophic optical mirror damage. It is found that the maximum optical output power of Al-free diode lasers is limited by catastrophic optical damage of the laser heterostructure. Maximum values of optical output power of 5.1 and 9.9 W have been attained in diode lasers with a narrow symmetric waveguide and broad asymmetric waveguide, respectively.

引用

页码：532 / 536

页数：5

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