Structural and photoluminescent properties of TiN thin films

被引：5

作者：

Solovan, M. N. ^{[1
]}

Brus, V. V. ^{[1
]}

Maryanchuk, P. D. ^{[1
]}

Fodchuk, I. M. ^{[1
]}

Lorents, V. M. ^{[1
]}

Sletov, A. M. ^{[1
]}

Sletov, M. M. ^{[1
]}

Gluba, M. ^{[2
]}

机构：

[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

[2] Helmholtz Zentrum Berlin Mat & Energie, D-12489 Berlin, Germany

来源：

OPTICS AND SPECTROSCOPY | 2014年 / 117卷 / 05期

关键词：

ELECTRICAL-RESISTIVITY; SURFACE-MORPHOLOGY; OPTICAL-PROPERTIES; BARRIER; RESISTANCE; GROWTH; LAYERS;

D O I：

10.1134/S0030400X14110198

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Structural and photoluminescent properties of TiN thin films deposited by dc reactive magnetron sputtering are studied. It is found that TiN thin films are polycrystalline with a grain size of similar to 15 nm and have a NaCl-type cubic crystal structure with a lattice constant of 0.42 nm. The TiN films under study exhibit photoluminescence in the spectral range h (nu) a parts per thousand 2.1-3.4 eV at 300 K.

引用

页码：753 / 755

页数：3

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