Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry

被引:1
作者
Yoon, J. J. [1 ,2 ]
Hwang, S. Y. [1 ,2 ]
Kang, Y. J. [1 ,2 ]
Kim, Y. D. [1 ,2 ]
Jeong, Y. H. [3 ]
Nahm, S. [4 ]
机构
[1] Kyung Hee Univ, Nanoopt Property Lab, Seoul 130701, South Korea
[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[3] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea
[4] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
关键词
Ellipsometry; Dielectric function; BaSm2Ti4O12; INSULATOR-METAL CAPACITORS; DIELECTRIC-PROPERTIES; MIM CAPACITORS; MICROSTRUCTURE;
D O I
10.1016/j.tsf.2009.01.102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We performed spectroscopic ellipsometric measurement to characterize BaSm2Ti4O12 (BST) thin films grown on Pt/Ti/SiO2/c-Si substrate by rf magnetron sputtering. The six BST films were prepared at various deposition temperatures and thermal annealing times. The resulting refractive indices and extinction coefficients of the BST films show only slight change by the deposition temperature but a significant change after thermal annealing, implying the importance of the post annealing process. The increase of the refractive index can be understood by the higher density of the BST films caused by the crystallization after annealing process. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3923 / 3926
页数:4
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