Preparation of Cu2ZnSnS4-based thin film solar cells by a combustion method

被引：32

作者：

Jin, Xin ^{[1
]}

Li, Jianmin ^{[1
]}

Chen, Guilin ^{[2
]}

Xue, Cong ^{[1
]}

Liu, Weifeng ^{[1
]}

Zhu, Changfei ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China

[2] Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350007, Peoples R China

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 146卷

关键词：

Cu2ZnSnS4; Combustion method; Band gap; Formation mechanism; Solar cell; SULFURIZATION TEMPERATURE; FABRICATION; CU2ZNSNSE4; GROWTH; SNS;

D O I：

10.1016/j.solmat.2015.11.027

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A novel route that fabricate Cu2ZnSnS4 solar cells by a combustion method has been successfully conducted. The probable formation mechanism of Cu2ZnSnS4 for metal oxides system during the sulfurization process is analyzed in detail through the phase analysis in several continuous temperature ranges in combination with thermodynamic calculation. The effects of annealing temperature on the structural, morphological, compositional and optical properties of absorber layer were studied. The UV-vis spectra revealed the band gap of as-prepared thin films varying from 1.48 to 1.34 eV along with rising the sulfurization temperature. It was found that secondary phase with narrow band gap significantly affects the band gap of Cu2ZnSnS4. The best performance of the Cu2ZnSnS4 thin film solar cells prepared by the combustion method achieved a powder conversion efficiency (PCE) of 1.6% with a short circuit current density of 10.5 mA/cm(2) and an open circuit voltage of 505 mV. This low-cost non-vacuum technique has a promising application in synthesis of light-absorbing layers for photovoltaic devices, which can vastly reduce the costs and simplify the preparation process. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：16 / 24

页数：9

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