Ensemble Monte Carlo Simulation of 4H-SiC for Electrons Mobility Calculation

被引：0

作者：

Kovalchuk, Andrii ^{[1
]}

Wozny, Janusz ^{[1
]}

Lisik, Zbigniew ^{[1
]}

Podgorski, Jacek ^{[1
]}

Bugalski, Piotr ^{[1
]}

Lobur, Mykhaylo ^{[2
]}

Kosobutskyy, Petro ^{[2
]}

机构：

[1] Lodz Univ Technol, Dept Semicond & Optoelect Devices, Lodz, Poland

[2] Lviv Polytech Natl Univ, CAD Dept, Lvov, Ukraine

来源：

2018 XIVTH INTERNATIONAL CONFERENCE ON PERSPECTIVE TECHNOLOGIES AND METHODS IN MEMS DESIGN (MEMSTECH) | 2018年

关键词：

Ensemble Monte Carlo; mobility simulation; silicon carbide; Conwell-Weisskopf model; Brooks-Herring model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The article presents an Ensemble Monte Carlo (EMC) method as a part of new TCAD tool for simulating the properties of silicon carbide semiconductor devices. The potential calculation is based on Poisson's equation in finite difference scheme with appropriate boundary conditions. The charge density computed by the cloud-in-cell algorithm to avoid the statistical noise of the solution.

引用

页码：73 / 76

页数：4

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