Effect of deposition pressure on the properties of amorphous carbon films by hot-filament chemical vapor deposition

被引:4
|
作者
Zhai, Zihao [1 ]
Shen, Honglie [1 ]
Chen, Jieyi [1 ]
Li, Xuemei [1 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Jiangsu Prov Key Lab Mat & Technol Energy Convers, 29 Yudao St, Nanjing 210016, Jiangsu, Peoples R China
关键词
DIAMOND-LIKE CARBON; ELECTRICAL-PROPERTIES; GAS-PRESSURE; THIN-FILMS; SUBSTRATE; GROWTH; CVD; TEMPERATURE; GRAPHENE; VOLTAGE;
D O I
10.1007/s10854-019-01350-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Deposition pressure is an important factor for the preparation of amorphous carbon (a-C) films through vacuum method. However, researches about the properties, especially optical and electrical properties of a-C films influenced by deposition pressure are still rare. In this work, hot-filament chemical vapor deposition (HFCVD) was used to deposit conductive a-C films under different deposition pressure conditions. As deposition pressure raised from 5 to 160Pa, a structural transition from a-C to nanocrystalline graphite that led to the increase of cluster size, sp(2) content and crystalline quality of a-C films was observed. The hybrid structure composed of amorphous and nanocrystalline phases was also revealed by high-resolution transmittance electron microscope. The mobility, transmittance and conductivity of films increased while the optical gap and carrier concentration decreased by elevating the deposition pressure. As a result, a-C films prepared at 160Pa showed the best property with a roughness of 0.412nm, a transmittance of 67%, an optical bandgap of 1.25eV, a resistivity of 75m and a mobility of 3.17cm(2) V-1 s(-1), which is comparable to those prepared through other methods. The small roughness, good transmittance and low resistivity implied that high quality a-C films can be prepared through HFCVD method by adjusting the deposition pressure.
引用
收藏
页码:10145 / 10151
页数:7
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