Ultrafast charge dynamics and photoluminescence in bilayer MoS2

被引:5
作者
Ud Din, Naseem [1 ]
Turkowski, Volodymyr [1 ]
Rahman, Talat S. [1 ]
机构
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
基金
美国能源部;
关键词
ultrafast charge dynamics; electron-phonon coupling; emission spectrum; bilayer MoS2; FEW-LAYER MOS2; ELECTRONIC-STRUCTURE; MONOLAYER; WS2; BANDGAP; VALLEY; FIELD;
D O I
10.1088/2053-1583/abd6b5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Our examination of the interplay of ultrafast charge dynamics and electron-phonon interaction in the AA' stacked bilayer MoS2 provides a microscopic basis for understanding the features (two peaks) in the emission spectrum. We demonstrate that while the initial accumulation of excited charge occurs at and near the Q point of the two-dimensional Brillioun zone, emission takes place predominantly through two pathways: direct charge recombination at the K point and indirect phonon-assisted recombination of electrons at the K valley and holes at the G hill of the Brillouin zone. Analysis of the wave vector dependencies of the electron-phonon interaction traces the higher energy peak to phonon-assisted relaxation of the excited electrons from the Q to the K valley in the conduction band. Our results thus reveal the importance of ultrafast charge dynamics in understanding photoemissive properties of a few-layer transition-metal dichalcogenide. These calculations are based on time dependent density functional theory in the density matrix formulation.
引用
收藏
页数:10
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