Bi4Ti3O12 thin films were obtained by the sol-gel method. The precursor solution was prepared by allowing the two metallic alkoxides, Bi(OC2H4OCH3)(3) and Ti(OC2H4OCH3)(4), to react in 2-methoxy-ethanol to form the mixed alkoxide. This stable sol was deposited by spin-coating onto platinized silicon substrates. X-Ray diffraction patterns indicate that the perovskite initial crystallization temperature is 460 degrees C for powder samples and it ranges between 400 and 500 degrees C, for thin films, as a function of the number of coating layers. Dense, smooth and crack free thin films with grain sizes ranging from 20 nm to 500 nn are obtained, depending on the number of coating layers and on the post-deposition temperature annealing.
