Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD

被引：2

作者：

Shen, X. Q. ^{[1
]}

Shimizu, M. ^{[1
]}

Okumura, H. ^{[1
]}

Xu, F. J. ^{[2
]}

Shen, B. ^{[2
]}

Zhang, G. Y. ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Energy Semicond Elect Res Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Surface structure; Metalorganic chemical vapor deposition; Nitride; LIGHT-EMITTING-DIODES; NM;

D O I：

10.1016/j.jcrysgro.2009.01.029

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN films and AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that surface morphologies of GaN films depend on the vicinal angle, however, they are not sensitive to the inclination directions of the substrate. The optimized vicinal angle for obtaining excellent surface morphology is around 0.5 degrees. This conclusion is also confirmed by characterizing the electrical property of two-dimensional electron gas (2DEG) in the AlGaN/GaN heterostructure. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2853 / 2856

页数：4

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