Simultaneous Boost of Power Factor and Figure-of-Merit in In-Cu Codoped SnTe

被引：53

作者：

Guo, Fengkai ^{[1
]}

Cui, Bo ^{[1
]}

Geng, Huiyuan ^{[1
]}

Zhang, Yang ^{[2
]}

Wu, Haijun ^{[2
]}

Zhang, Qian ^{[3
]}

Yu, Bo ^{[4
]}

Pennycook, Stephen J. ^{[2
]}

Cai, Wei ^{[1
]}

Sui, Jiehe ^{[1
]}

机构：

[1] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Heilongjiang, Peoples R China

[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore

[3] Harbin Inst Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China

[4] Ningbo Fengcheng Adv Energy Mat Res Inst, Ningbo 315500, Zhejiang, Peoples R China

来源：

SMALL | 2019年 / 15卷 / 36期

基金：

中国国家自然科学基金;

关键词：

interstitials; resonant levels; SnTe; HIGH THERMOELECTRIC PERFORMANCE; VALENCE-BAND CONVERGENCE; THERMAL TRANSPORT; TIN TELLURIDE; PBTE; CONDUCTIVITY; OPTIMIZATION; ENHANCEMENT; SCATTERING; EFFICIENCY;

D O I：

10.1002/smll.201902493

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Significantly enhanced thermoelectric performance is achieved for eco-friendly SnTe by a coorperative effect between a dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, the Seebeck coefficient is remarkably improved, leading to an enhanced power factor, with a high level of approximate to 29 mu W cm(-1) K-2 at 873 K. Lattice thermal conductivity is sharply reduced, approaching the amorphous limit, through the strong phonon scattering induced by multiple scales of Cu2Te nanoprecipitates, as well as Cu interstitials, leading to a high ZT value of approximate to 1.55 at 873 K.

引用

页数：10

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