The influence of doposition conditions on the structrure of ZnTe/ZnTe:Cu thin films and the properties of CdTe cells

被引：1

作者：

Zhong Zheng-Xiang ^{[1
]}

Zheng Jia-Gui ^{[1
]}

Zhong Yong-Qiang ^{[2
]}

Yang Fan ^{[1
]}

Feng Liang-Huan ^{[1
]}

Cai Wei ^{[1
]}

Cai Ya-Ping ^{[1
]}

Zhang Jing-Quan ^{[1
]}

Li Bing ^{[1
]}

Lei Zhi ^{[1
]}

Li Wei ^{[1
]}

Wu Li-Li ^{[1
]}

机构：

[1] Sichuan Univ, Sch Mat Sci & Engn, Chengdu 610064, Peoples R China

[2] China Acad Engn Phys, Miangang 621900, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 07期

关键词：

polycrystalline ZnTe film; deposition temperature; structure of films; device performance;

D O I：

10.7498/aps.58.4920

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polycrystalline film of ZnTe/ZnTe:Cu is fabricated by co-vaporization. The influence of evaporation temperature on the structue of the film and Cu distribution in the film and performance of the cell fabricated with the films are studied by XRD, XPS, C-V and I-V analysis. The results indicate that, (1) the deposition temeperature has less effecton the structure of the film ZnTe/ZnTe:Cu, (2) the fact that the Cu concentration in the film deposited at 100 degrees C raises to a maximum and descend rapidly shows the function of ZnTe film in preventing Cu atoms diffusing in the film and the CdTe cell fabricated with the film shows a wider barrier (X-D) smaller capacitance, better diode characteristic and larger conversion efficiency.

引用

页码：4920 / 4924

页数：5

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