Epitaxial growth of γ-Al2O3 on Ti2AlC(0001) by reactive high-power impulse magnetron sputtering

被引：2
|
作者：
Eklund, Per [1 ]
Frodelius, Jenny [1 ]
Hultman, Lars [1 ]
Lu, Jun [1 ]
Magnfalt, Daniel [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden
来源：
AIP ADVANCES | 2014年 / 4卷 / 01期
基金：
瑞典研究理事会;
关键词：
ALPHA-AL2O3; THIN-FILMS; DEGREES-C; M(N+1)AX(N) PHASES; OXIDATION; DEPOSITION; TEMPLATE; MICROSTRUCTURE; STABILITY; COATINGS;
D O I：
10.1063/1.4863560
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Al2O3 was deposited by reactive high-power impulse magnetron sputtering at 600 degrees C onto pre-deposited Ti2AlC(0001) thin films on alpha-Al2O3(0001) substrates. The Al2O3 was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial gamma-Al2O3(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of gamma-Al2O3 on Ti2AlC (0001) open prospects for growth of crystalline alumina as protective coatings on Ti2AlC and related nanolaminated materials. The crystallographic orientation relationships are gamma-Al2O3(111)//Ti2AlC(0001) (out-of-plane) and gamma-Al2O3(2 (2) over bar0)//Ti2AlC(11 (2) over bar0) (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 degrees C resulted in partial decomposition of the Ti2AlC by depletion of Al and diffusion into and through the gamma-Al2O3 layer. (C) 2014 Author(s).
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页数：5
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