Control of threshold voltage and hysteresis in organic field-effect transistors

被引：18

作者：

Kawaguchi, Hideyuki ^{[1
]}

Taniguchi, Masateru ^{[1
]}

Kawai, Tomoji ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期

关键词：

field effect transistors; insulating thin films; semiconductor-insulator boundaries; THIN-FILM TRANSISTORS; GATE DIELECTRICS; INSULATOR; CRYSTAL; CIRCUITS;

D O I：

10.1063/1.3095501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated organic field-effect transistors that have hybrid gate insulating films, consisting of an inorganic insulating film and a cross-linked insulating polymer. The hybrid insulating films allow the capacitance to be controlled easily, which makes it possible to reduce the influence of trapped charge at the insulator-semiconductor interface. As a result, the threshold voltage and the threshold voltage shift can be controlled. The increased capacitance of the insulating film results in low driving voltages and small hysteresis in the transfer characteristics.

引用

页数：3

共 28 条

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