Investigation of Static and Dynamic Characteristics of Optically Controlled Field Effect Transistors

被引：31

作者：

Colace, Lorenzo ^{[1
]}

Sorianello, Vito ^{[2
]}

Rajamani, Saravanan ^{[1
]}

机构：

[1] Univ Roma Tre, NooEL, Dept Engn, I-00146 Rome, Italy

[2] CNIT LNRF Natl Lab Photon Networks, I-56124 Pisa, Italy

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2014年 / 32卷 / 12期

关键词：

Ge-on-Si; optically controlled transistor; optical interconnects; photodetectors; phototransistors; GERMANIUM; PHOTODETECTOR; SILICON;

D O I：

10.1109/JLT.2014.2322978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on an optically controlled field effect transistor (OCFET). The device is based on a modified MOSFET geometry with a Germanium layer interposed between the gate oxide and the gate metal contact. The investigation is performed using the technology computer aided design tool. We describe the principle of operation and investigate the static and dynamic properties of the OCFET under near infrared light at 1.55 mu m. Device performance in terms of both ON/OFF current ratio and switching times are studied versus design parameters such as Germanium doping and lifetime as well as gate bias voltage and optical power. Strategies toward best operating conditions and satisfactory tradeoff are investigated and discussed along with future perspective and possible fundamental limitations.

引用

页码：2233 / 2239

页数：7

共 50 条

[1] Design and simulation of optically controlled field effect transistors
Sorianello, V.
Colace, L.
Rajamani, S.
Assanto, G.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1, 2014, 11 (01): : 81 - 84
[2] Understanding Quasi-Static and Dynamic Characteristics of Organic Ferroelectric Field Effect Transistors
Ke, Hanjing
Liang, Xiaoci
Yin, Xiaozhe
Liu, Baiquan
Han, Songjia
Jiang, Shijie
Liu, Chuan
She, Xiaojian
MICROMACHINES, 2024, 15 (04)
[3] Simulations of Ge based optically controlled field effect transistors
Rajamani, S.
Sorianello, V.
De Iacovo, A.
Colace, L.
2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2014,
[4] Noise factor of optically controlled GaAs field-effect transistors
Bocharova, I.A.
Journal of Applied Spectroscopy, 2003, 70 (06) : 948 - 953
[5] STATIC AND DYNAMIC ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS
LEROUX, T
SOLID-STATE ELECTRONICS, 1986, 29 (01) : 47 - 58
[6] OPTICALLY CONTROLLED CHARACTERISTICS OF A NEW HETEROJUNCTION FIELD-EFFECT TRANSISTOR
CHAKRABARTI, P
PAL, J
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (02): : 186 - 190
[7] Static Nonlinearity in Graphene Field Effect Transistors
Rodriguez, Saul
Smith, Anderson
Vaziri, Sam
Ostling, Mikael
Lemme, Max C.
Rusu, Ana
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 3001 - 3003
[8] ANALYTICAL RESEARCH ON THE STATIC CHARACTERISTICS OF HETEROSTRUCTURE ISOLATED GATE FIELD-EFFECT TRANSISTORS
王德宁
顾聪
王尉源
JournalofElectronics(China), 1992, (02) : 122 - 128
[9] CURRENT MODULATION CHARACTERISTICS IN OPTICALLY-CONTROLLED FIELD-EFFECT TRANSISTOR
SHIMIZU, Y
SHIMOMURA, K
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (11) : 1338 - 1340
[10] INVESTIGATION OF OPTICALLY COUPLED TRANSISTORS
ANDREEV, VM
ZADIRANOV, YM
KOROLKOV, VI
ROZHKOV, AV
YAKOVENKO, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (09): : 1030 - 1033

← 1 2 3 4 5 →