Phase transition of bismuth telluride thin films grown by MBE

被引：24
|
作者：
Fulop, Attila [1 ]
Song, Yuxin [1 ,2 ]
Charpentier, Sophie [3 ]
Shi, Peixiong [4 ]
Ekstrom, Maria [3 ]
Galletti, Luca [3 ,5 ]
Arpaia, Riccardo [3 ,5 ]
Bauch, Thilo [3 ]
Lombardi, Floriana [3 ]
Wang, Shumin [1 ,2 ]
机构：
[1] Chalmers, Photon Lab, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
[2] Chinese Acad Sci, Shanghai Inst Microsystem & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[3] Chalmers, Quantum Device Phys Lab Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41258 Gothenburg, Sweden
[4] Tech Univ Denmark, DK-2800 Lyngby, Denmark
[5] Univ Naples Federico II, CNR SPIN, Dipartimento Sci Fis, I-80126 Naples, Italy
来源：
APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 04期
基金：
瑞典研究理事会;
关键词：
TOPOLOGICAL INSULATORS; BI2TE3; DIFFRACTION;
D O I：
10.7567/APEX.7.045503
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3. (C) 2014 The Japan Society of Applied Physics
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页数：4
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