Manganese Doping of MoSe2 Promotes Active Defect Sites for Hydrogen Evolution

被引:85
作者
Kuraganti, Vasu [1 ,2 ]
Jain, Akash [3 ]
Bar-Ziv, Ronen [1 ,5 ]
Ramasubramaniam, Ashwin [4 ]
Bar-Sadan, Maya [1 ,2 ]
机构
[1] Ben Gurion Univ Negev, Dept Chem, IL-8410501 Beer Sheva, Israel
[2] Ben Gurion Univ Negev, Ilse Katz Inst Nanoscale Sci & Technol, IL-8410501 Beer Sheva, Israel
[3] Univ Massachusetts, Dept Chem Engn, Amherst, MA 01003 USA
[4] Univ Massachusetts, Dept Mech & Ind Engn, Amherst, MA 01003 USA
[5] Nucl Res Ctr Negev, Dept Chem, IL-84190 Beer Sheva, Israel
基金
美国国家科学基金会;
关键词
catalysis; electrocatalysis; 2D materials; transition-metal dichalcogenides; density functional theory; TOTAL-ENERGY CALCULATIONS; SINGLE-LAYER MOS2; EDGE SITES; CATALYTIC-ACTIVITY; SULFUR VACANCIES; BASAL PLANES; MOLYBDENUM; NANOSHEETS; SELENIDES; BOUNDARY;
D O I
10.1021/acsami.9b05670
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Transition-metal dichalcogenides (TMDs) are being widely pursued as inexpensive, earth-abundant substitutes for precious-metal catalysts in technologically important reactions such as electrochemical hydrogen evolution reaction (HER). However, the relatively high onset potentials of TMDs relative to Pt remain a persistent challenge in widespread adoption of these materials. Here, we demonstrate a one-pot synthesis approach for substitutional Mn-doping of MoSe2 nanoflowers to achieve appreciable reduction in the overpotential for HER along with a substantial improvement in the charge-transfer kinetics. Electron microscopy and elemental characterization of our samples show that the MoSe2 nanoflowers retain their structural integrity without any evidence for dopant clustering, thus confirming true substitutional doping of the catalyst. Complementary density functional theory calculations reveal that the substitutional Mn-dopants act as promoters, rather than enhanced active sites, for the formation of Se-vacancies in MoSe2 that are known to be catalytically active for HER Our work advances possible strategies for activating MoSe2 and similar TMDs by the use of substitutional dopants, not for their inherent activity, but as promoters of active chalcogen vacancies.
引用
收藏
页码:25155 / 25162
页数:8
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