Design of a Dual-Band Power Amplifier Using a Simple Method

被引：21

作者：

Zhang, Zhiwei ^{[1
,2
]}

Cheng, Zhiqun ^{[1
]}

Fusco, Vincent ^{[2
]}

Gu, Chao ^{[2
]}

机构：

[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China

[2] Queens Univ Belfast, ECIT Inst, Belfast BT3 9DT, Antrim, North Ireland

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2021年 / 31卷 / 02期

关键词：

Couplers; Impedance; Dual band; Harmonic analysis; Frequency conversion; Power generation; Wireless communication; Coupler; dual-band; high-efficiency; power amplifier (PA);

D O I：

10.1109/LMWC.2020.3047733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a simple method to design dual-band high-efficiency power amplifiers (PAs). The dual-band coupler is exploited to design the output circuits of the PA. By proper selection of impedance conditions of terminal ports, the dual-band coupler can convert the fundamental impedance of transistor to the standard 50-Omega load at two frequencies. At the same time, the second harmonic impedance is also controlled without the need for additional tuning. For validation, a dual-band high-efficiency PA is designed and fabricated by using CGH40010F GaN HEMT. Measurements indicate that the designed PA can deliver saturated output power of 41.6 and 42.1 dBm at 1 and 2.3 GHz, respectively. Also, the obtained drain efficiency exceeds 72% at both frequencies.

引用

页码：149 / 152

页数：4

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